(404) 551-4447EMEA TeamContact UsAbout UsCareers
loading content
NDT452AP
onsemi

NDT452AP

MFR #NDT452AP

FPN#NDT452AP-FL

MFRonsemi

Part DescriptionMOSFET P-Channel 30V 5A (Ta) 3W (Ta) Surface Mount, TO-261-4
Datasheet
55603-Datasheet
Quote Onlymore info
Multiples of: 4000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNDT452AP
Packaging TypeTape and Reel
Packaging Quantity4000
Lifecycle StatusActive
ROHSCompliant with Exemption
RoHs Exemption Type7(a), RoHS (2015/863)
RoHs ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationP-Channel
Drain Source Voltage30V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance690pF
Input Capacitance Test Voltage15V
Life Cycle StatusActive
Maximum Continuous Drain Current5A (Ta)
Maximum Drain to Source Resistance65 mOhm @ 5A, 10V
Maximum Gate to Source Threshold Voltage2.8V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation3W (Ta)
Maximum Pulse Drain Current15A
Maximum Total Gate Charge30nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-65°C (TJ)
Package TypeSOT-223
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge5.2nC
Typical Gate to Source Charge3.2nC