NDS9952A-F011
MFR #NDS9952A-F011
FPN#NDS9952A-F011-FL
MFRonsemi
Part DescriptionMOSFET Array N and P-Channel 30V 2.9A 900mW (Ta) Surface Mount, 8-SOIC
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | NDS9952A |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 4000 |
| Lifecycle Status | Obsolete |
| ROHS | Compliant |
| RoHs Exemption Type | RoHS (2015/863) |
| Reach Status | Compliant |
| Channel Mode | Enhancement |
| Configuration | N and P-Channel |
| Drain Source Voltage | 30V |
| Drive Voltage | 4.5V, 10V |
| FET Feature | Standard |
| FET Options | N/R |
| FET Type | Array |
| Gate to Source Voltage | ±20V |
| Input Capacitance | 320pF, 350pF |
| Input Capacitance Test Voltage | 10V |
| Life Cycle Status | Obsolete |
| Maximum Continuous Drain Current | 3.7A (Ta), 2.7A (Ta) |
| Maximum Drain to Source Resistance | 80 mOhm @ 1A, 10V, 130 mOhm @ 1A, 10V |
| Maximum Gate to Source Threshold Voltage | 2.8V @ 250µA |
| Maximum Junction Temperature | 150°C (TJ) |
| Maximum Power Dissipation | 900mW (Ta) |
| Maximum Pulse Drain Current | 15A, 10A |
| Maximum Total Gate Charge | 27nC, 25nC |
| Maximum Total Gate Charge Test Voltage | 10V |
| Minimum Junction Temperature | -55°C (TJ) |
| Package Type | 8-SOIC |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 3.4nC |
| Typical Gate to Source Charge | 1.5nC, 1.6nC |