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NDS356AP
onsemi

NDS356AP

MFR #NDS356AP

FPN#NDS356AP-FL

MFRonsemi

Part DescriptionMOSFET P-Channel 30V 1.1A (Ta) 500mW (Ta) Surface Mount, SOT-23-3
Datasheet
55593-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNDS356AP
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusObsolete
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
RoHs ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationP-Channel
Drain Source Voltage30V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance280pF
Input Capacitance Test Voltage10V
Life Cycle StatusObsolete
Maximum Continuous Drain Current1.1A (Ta)
Maximum Drain to Source Resistance200 mOhm @ 1.3A, 10V
Maximum Gate to Source Threshold Voltage2.5V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation500mW (Ta)
Maximum Pulse Drain Current10A
Maximum Total Gate Charge4.4nC
Maximum Total Gate Charge Test Voltage5V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
Package TypeSOT-23-3
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge1.5nC
Typical Gate to Source Charge700pC