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NDS0610-G
onsemi

NDS0610-G

MFR #NDS0610-G

FPN#NDS0610-G-FL

MFRonsemi

Part DescriptionP-Channel 60 V 120mA (Ta) 360mW (Ta) Surface Mount SOT-23-3
Datasheet
55588-Datasheet
Quote Onlymore info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNDS0610
Lifecycle StatusObsolete
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationP-Channel
Drain Source Voltage60V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance79pF
Input Capacitance Test Voltage25V
Life Cycle StatusObsolete
Maximum Continuous Drain Current120mA (Ta)
Maximum Drain to Source Resistance10 Ohm @ 500mA, 10V
Maximum Gate to Source Threshold Voltage3.5V @ 1mA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation360mW (Ta)
Maximum Pulse Drain Current1A
Maximum Total Gate Charge2.5nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeSOT-23-3
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge400pC
Typical Gate to Source Charge300pC