(404) 551-4447EMEA TeamContact UsAbout UsCareers
loading content
NDD03N80Z-1G
onsemi

NDD03N80Z-1G

MFR #NDD03N80Z-1G

FPN#NDD03N80Z-1G-FL

MFRonsemi

Part DescriptionN-Channel 800 V 2.9A (Tc) 96W (Tc) Through Hole I-Pak
Datasheet
63792-Datasheet
Quote Onlymore info
Multiples of: 75more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNDD03N80Z
Packaging TypeTube
Packaging Quantity75
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage800V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±30V
Input Capacitance440pF
Input Capacitance Test Voltage25V
Life Cycle StatusObsolete
Maximum Continuous Drain Current2.9A (Tc)
Maximum Drain to Source Resistance4.5 Ohm @ 1.2A, 10V
Maximum Gate to Source Threshold Voltage4.5V @ 50µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation96W (Tc)
Maximum Pulse Drain Current12A
Maximum Total Gate Charge17nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeI-Pak
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge9.1nC
Typical Gate to Source Charge3.5nC