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MSD602-RT1G
onsemi

MSD602-RT1G

MFR #MSD602-RT1G

FPN#MSD602-RT1G-FL

MFRonsemi

Part DescriptionBipolar (BJT) Transistor NPN 50V 500mA 200mW Surface Mount, SOT-23-3
Datasheet
98351-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameMSD602-RT1G
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
ConfigurationNPN
Gain BandwidthN/A
Life Cycle StatusActive
Maximum Collector Current500mA
Maximum Collector Emitter Breakdown Voltage50V
Maximum Collector Emitter Saturation Voltage600mV @ 30mA, 300mA
Maximum Cutoff Collector Current100nA
Maximum Operating Temperature150°C (TJ)
Maximum Power Dissipation200mW
Minimum DC Current Gain120 @ 150mA, 10V
Minimum Operating TemperatureN/A
Package TypeSC-59
Technology TypeSI
Transistor TypeSingle