MRF6S20010NR1
MFR #MRF6S20010NR1
FPN#MRF6S20010NR1-FL
MFRNXP
Part DescriptionRF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-270AA
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | MRF6S20010NR1 |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 500 |
| Lifecycle Status | Obsolete |
| RoHS | Compliant with Exemption |
| RoHS Exemption Type | 7(a), RoHS (2015/863) |
| ROHS China | Not Compliant |
| Reach Status | Not Compliant |
| 1dB Compression Point (P1dB) | 40.9dBm |
| 3dB Compression Point (P3dB) | 41.5dBm |
| Channel Mode | Enhancement |
| Configuration | N-Channel |
| Gain | 15.5dB |
| Gate to Source Voltage | +12V, -500mV |
| Life Cycle Status | Obsolete |
| Maximum Continuous Drain Current | 10µA |
| Maximum Junction Temperature | 225°C |
| Maximum Operating Frequency | 2.2GHz |
| Maximum Output Power | N/A |
| Minimum Junction Temperature | N/A |
| Minimum Operating Frequency | 1.6GHz |
| Noise Figure | N/A |
| Noise Test Current | 130mA |
| Noise Test Voltage | 28V |
| Number of Element per Chip | 1 |
| Package Type | TO-270-2 |
| Signal Type | Continuous Wave, Pulse |
| Technology Type | N/A |
| Transistor Type | LDMOS |
| Typical Output Power | 10W |
| Voltage Rating | 68V |