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MMUN2230LT1G
onsemi

MMUN2230LT1G

MFR #MMUN2230LT1G

FPN#MMUN2230LT1G-FL

MFRonsemi

Part DescriptionDigital BJT NPN - Pre-Biased 50V 100mA 246mW, SOT-23-3
Datasheet
52937-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameMMUN2230L
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
ROHSCompliant
RoHs Exemption TypeNone, RoHS (2015/863)
RoHs ChinaCompliant
Reach StatusCompliant
Base Resistance - R11 kOhm
ConfigurationNPN - Pre-Biased
Emitter Base Resistance - R21 kOhm
Gain BandwidthN/A
Life Cycle StatusActive
Maximum Collector Base Voltage50V
Maximum Collector Current100mA
Maximum Collector Emitter Breakdown Voltage50V
Maximum Collector Emitter Saturation Voltage250mV @ 5mA, 10mA
Maximum Cutoff Collector Current500nA
Maximum Emitter Base VoltageN/A
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation246mW
Minimum DC Current Gain3 @ 5mA, 10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
Package TypeSOT-23-3 (TO-236)
Resistor Ratio R1 R21
Technology TypeN/A
Transistor TypeSingle