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MMUN2130LT1G
onsemi

MMUN2130LT1G

MFR #MMUN2130LT1G

FPN#MMUN2130LT1G-FL

MFRonsemi

Part DescriptionPre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 246 mW Surface Mount SOT-23-3 (TO-236)
Datasheet
52928-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameMMUN2130L
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Base Resistance - R11 kOhm
ConfigurationPNP - Pre-Biased
Emitter Base Resistance - R21 kOhm
Gain BandwidthN/A
Life Cycle StatusActive
Maximum Collector Base Voltage50V
Maximum Collector Current100mA
Maximum Collector Emitter Breakdown Voltage50V
Maximum Collector Emitter Saturation Voltage250mV @ 5mA, 10mA
Maximum Cutoff Collector Current500nA
Maximum Emitter Base VoltageN/A
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation246mW
Minimum DC Current Gain3 @ 5mA, 10V
Minimum Junction Temperature-55°C (TJ)
Package TypeSOT-23-3 (TO-236)
Resistor Ratio R1 R21
Technology TypeN/A
Transistor TypeSingle