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NXP

MMRF1310HR5

MFR #MMRF1310HR5

FPN#MMRF1310HR5-FL

MFRNXP

Part DescriptionLateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 300 W, 50 V.
Datasheet
52834-Datasheet
Quote Onlymore info
Multiples of: 50more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameMMRF1310HR5
Packaging TypeTape and Reel
Packaging Quantity50
Lifecycle StatusObsolete
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
1dB Compression Point (P1dB)54.8dBm
3dB Compression Point (P3dB)56dBm
Channel ModeEnhancement
Configuration2 N-Channel
Gain26.5dB
Gate to Source Voltage+10V, -6V
Life Cycle StatusObsolete
Maximum Continuous Drain Current10µA
Maximum Junction Temperature225°C
Maximum Operating Frequency600MHz
Maximum Output PowerN/A
Minimum Junction TemperatureN/A
Minimum Operating Frequency1.8MHz
Noise FigureN/A
Noise Test Current100mA
Noise Test Voltage50V
Number of Element per Chip2
Package TypeNI780-4
Signal TypeContinuous Wave, Pulse
Technology TypeN/A
Transistor TypeLDMOS
Typical Output Power300W
Voltage Rating133V