(404) 551-4447EMEA TeamContact UsAbout UsCareers
loading content
MMBT5550LT1G
onsemi

MMBT5550LT1G

MFR #MMBT5550LT1G

FPN#MMBT5550LT1G-FL

MFRonsemi

Part DescriptionBipolar (BJT) Transistor NPN 140V 600mA 225mW Surface Mount, TO-236-3
Datasheet
52746-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameMMBT5550L
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Package TypeSOT-23-3 (TO-236)
ConfigurationNPN
Gain BandwidthN/A
Maximum Collector Current600mA
Maximum Collector Emitter Breakdown Voltage140V
Maximum Collector Emitter Saturation Voltage250mV @ 1mA, 10mA
Maximum Cutoff Collector Current100nA (ICBO)
Maximum DC Current Gain250 @ 10mA, 5V
Maximum Junction Temperature150°C
Maximum Operating TemperatureN/A
Maximum Power Dissipation225mW
Minimum DC Current Gain60 @ 10mA, 5V
Minimum Junction Temperature-55°C
Minimum Operating TemperatureN/A
Technology TypeSI
Transistor TypeSingle