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MMBT5550LT1G
onsemi

MMBT5550LT1G

MFR #MMBT5550LT1G

FPN#MMBT5550LT1G-FL

MFRonsemi

Part DescriptionBipolar (BJT) Transistor NPN 140V 600mA 225mW Surface Mount, TO-236-3
Datasheet
52746-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameMMBT5550L
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
ROHSCompliant
RoHs Exemption TypeNone, RoHS (2015/863)
RoHs ChinaCompliant
Reach StatusCompliant
ConfigurationNPN
Gain BandwidthN/A
Life Cycle StatusActive
Maximum Collector Current600mA
Maximum Collector Emitter Breakdown Voltage140V
Maximum Collector Emitter Saturation Voltage250mV @ 1mA, 10mA
Maximum Cutoff Collector Current100nA (ICBO)
Maximum Operating Temperature150°C (TJ)
Maximum Power Dissipation225mW
Minimum DC Current Gain60 @ 10mA, 5V
Minimum Operating Temperature-55°C (TJ)
Package TypeSOT-23-3 (TO-236)
Technology TypeSI
Transistor TypeSingle