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MJW21193G
onsemi

MJW21193G

MFR #MJW21193G

FPN#MJW21193G-FL

MFRonsemi

Part DescriptionBipolar (BJT) Transistor PNP 250V 16A 4MHz 200W Through Hole, TO-247-3
Datasheet
52016-Datasheet
Quote Onlymore info
Multiples of: 30more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameMJW21193
Packaging TypeTube
Packaging Quantity30
Lifecycle StatusActive
ROHSCompliant
RoHs Exemption TypeNone, RoHS (2015/863)
RoHs ChinaCompliant
Reach StatusCompliant
Package TypeTO-247
ConfigurationPNP
Gain Bandwidth4MHz
Maximum Collector Current16A
Maximum Collector Emitter Breakdown Voltage250V
Maximum Collector Emitter Saturation Voltage4V @ 3.2A, 16A
Maximum Cutoff Collector Current100µA
Maximum DC Current Gain80 @ 8A, 5V
Maximum Junction Temperature150°C
Maximum Operating TemperatureN/A
Maximum Power Dissipation200W
Minimum DC Current Gain20 @ 8A, 5V
Minimum Junction Temperature-65°C
Minimum Operating TemperatureN/A
Technology TypeSI
Transistor TypeSingle