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onsemi

MJL21196G

MFR #MJL21196G

FPN#MJL21196G-FL

MFRonsemi

Part DescriptionBipolar (BJT) Transistor NPN 250 V 16 A 4MHz 200 W Through Hole TO-264
Datasheet
52014-Datasheet
Quote Onlymore info
Multiples of: 25more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameMJL21196
Packaging TypeTube
Packaging Quantity25
Lifecycle StatusActive
ROHSCompliant with Exemption
RoHs Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
ConfigurationNPN
Gain Bandwidth4MHz
Life Cycle StatusActive
Maximum Collector Current16A
Maximum Collector Emitter Breakdown Voltage250V
Maximum Collector Emitter Saturation Voltage4V @ 3.2A, 16A
Maximum Cutoff Collector Current100µA
Maximum Operating Temperature150°C (TJ)
Maximum Power Dissipation200W
Minimum DC Current Gain25 @ 8A, 5V
Minimum Operating Temperature-65°C (TJ)
Package TypeTO-264
Technology TypeSI
Transistor TypeSingle