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MJE5851G
onsemi

MJE5851G

MFR #MJE5851G

FPN#MJE5851G-FL

MFRonsemi

Part DescriptionBipolar (BJT) Transistor PNP 350 V 8 A 80 W Through Hole TO-220
Datasheet
51996-Datasheet
Quote Onlymore info
Multiples of: 50more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameMJE5851
Packaging TypeTube
Packaging Quantity50
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
ConfigurationPNP
Gain BandwidthN/A
Life Cycle StatusObsolete
Maximum Collector Current8A
Maximum Collector Emitter Breakdown Voltage350V
Maximum Collector Emitter Saturation Voltage5V @ 3A, 8A
Maximum Cutoff Collector CurrentN/A
Maximum Operating Temperature150°C (TJ)
Maximum Power Dissipation80W
Minimum DC Current Gain15 @ 2A, 5V
Minimum Operating Temperature-65°C (TJ)
Package TypeTO-220-3
Technology TypeSI
Transistor TypeSingle