
onsemi
MJE5742G
MFR #MJE5742G
FPN#MJE5742G-FL
MFRonsemi
Part DescriptionBipolar (BJT) Transistor NPN - Darlington 400 V 8 A 2 W Through Hole TO-220
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | MJE5742 |
| Packaging Type | Tube |
| Packaging Quantity | 50 |
| Lifecycle Status | Active |
| RoHS | Compliant with Exemption |
| RoHS Exemption Type | 7(a), RoHS (2015/863) |
| ROHS China | Not Compliant |
| Reach Status | Not Compliant |
| Configuration | NPN - Darlington |
| Gain Bandwidth | N/A |
| Life Cycle Status | Active |
| Maximum Collector Base Voltage | N/A |
| Maximum Collector Current | 8A |
| Maximum Collector Emitter Breakdown Voltage | 400V |
| Maximum Collector Emitter Saturation Voltage | 3V @ 400mA, 8A |
| Maximum Cutoff Collector Current | N/A |
| Maximum Emitter Base Voltage | 8V |
| Maximum Operating Temperature | 150°C (TJ) |
| Maximum Power Dissipation | 2W |
| Minimum DC Current Gain | 200 @ 2A, 5V |
| Minimum Operating Temperature | -65°C (TJ) |
| Package Type | TO-220-3 |
| Technology Type | SI |
| Transistor Type | Single |
