
MJE5742G
MFR #MJE5742G
FPN#MJE5742G-FL
MFRonsemi
Part DescriptionBipolar (BJT) Transistor NPN - Darlington 400 V 8 A 2 W Through Hole TO-220
Datasheet
Quote Only
Product Attributes
Main Category | Semiconductors |
Category | Discrete Semiconductors |
Sub Category | Transistors |
Family Name | MJE5742 |
Packaging Type | Tube |
Packaging Quantity | 50 |
Lifecycle Status | Active |
RoHS | Compliant with Exemption |
RoHS Exemption Type | 7(a), RoHS (2015/863) |
ROHS China | Not Compliant |
Reach Status | Not Compliant |
Configuration | NPN - Darlington |
Gain Bandwidth | N/A |
Life Cycle Status | Active |
Maximum Collector Base Voltage | N/A |
Maximum Collector Current | 8A |
Maximum Collector Emitter Breakdown Voltage | 400V |
Maximum Collector Emitter Saturation Voltage | 3V @ 400mA, 8A |
Maximum Cutoff Collector Current | N/A |
Maximum Emitter Base Voltage | 8V |
Maximum Operating Temperature | 150°C (TJ) |
Maximum Power Dissipation | 2W |
Minimum DC Current Gain | 200 @ 2A, 5V |
Minimum Operating Temperature | -65°C (TJ) |
Package Type | TO-220-3 |
Technology Type | SI |
Transistor Type | Single |