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MJE5731G
onsemi

MJE5731G

MFR #MJE5731G

FPN#MJE5731G-FL

MFRonsemi

Part DescriptionBipolar (BJT) Transistor PNP 350 V 1 A 10MHz 40 W Through Hole TO-220
Datasheet
51993-Datasheet
Quote Onlymore info
Multiples of: 50more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameMJE5731
Packaging TypeTube
Packaging Quantity50
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
ConfigurationPNP
Gain Bandwidth10MHz
Life Cycle StatusActive
Maximum Collector Current1A
Maximum Collector Emitter Breakdown Voltage350V
Maximum Collector Emitter Saturation Voltage1V @ 200mA, 1A
Maximum Cutoff Collector Current1mA
Maximum Operating Temperature150°C (TJ)
Maximum Power Dissipation40W
Minimum DC Current Gain30 @ 300mA, 10V
Minimum Operating Temperature-65°C (TJ)
Package TypeTO-220-3
Technology TypeSI
Transistor TypeSingle