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MJE4343G
onsemi

MJE4343G

MFR #MJE4343G

FPN#MJE4343G-FL

MFRonsemi

Part DescriptionBipolar (BJT) Transistor NPN 160 V 16 A 1MHz 125 W Through Hole TO-247-3
Datasheet
51992-Datasheet
Quote Onlymore info
Multiples of: 30more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameMJE4343
Packaging TypeTube
Packaging Quantity30
Lifecycle StatusObsolete
ROHSCompliant
RoHs Exemption TypeNone, RoHS (2015/863)
Reach StatusCompliant
ConfigurationNPN
Gain Bandwidth1MHz
Life Cycle StatusLast Time Buy
Maximum Collector Current16A
Maximum Collector Emitter Breakdown Voltage160V
Maximum Collector Emitter Saturation Voltage3.5V @ 2A, 16A
Maximum Cutoff Collector Current750µA
Maximum Operating Temperature150°C (TJ)
Maximum Power Dissipation125W
Minimum DC Current Gain15 @ 8A, 2V
Minimum Operating Temperature-65°C (TJ)
Package TypeTO-247
Technology TypeSI
Transistor TypeSingle