
MJE3055TG
MFR #MJE3055TG
FPN#MJE3055TG-FL
MFRonsemi
Part DescriptionBipolar (BJT) Transistor NPN 60 V 10 A 2MHz 75 W Through Hole TO-220
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | MJE3055T |
| Packaging Type | Tube |
| Packaging Quantity | 50 |
| Lifecycle Status | Active |
| RoHS | Compliant with Exemption |
| RoHS Exemption Type | 7(a), RoHS (2015/863) |
| RoHs China | Not Compliant |
| Reach Status | Not Compliant |
| Configuration | NPN |
| Gain Bandwidth | 2MHz |
| Life Cycle Status | Active |
| Maximum Collector Current | 10A |
| Maximum Collector Emitter Breakdown Voltage | 60V |
| Maximum Collector Emitter Saturation Voltage | 8V @ 3.3A, 10A |
| Maximum Cutoff Collector Current | 700µA |
| Maximum Operating Temperature | 150°C (TJ) |
| Maximum Power Dissipation | 75W |
| Minimum DC Current Gain | 20 @ 4A, 4V |
| Minimum Operating Temperature | -55°C (TJ) |
| Package Type | TO-220-3 |
| Technology Type | SI |
| Transistor Type | Single |
