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MJE3055TG

MJE3055TG

MFR #MJE3055TG

FPN#MJE3055TG-FL

MFRonsemi

Part DescriptionBipolar (BJT) Transistor NPN 60 V 10 A 2MHz 75 W Through Hole TO-220
Quote Onlymore info
Multiples of: 50more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameMJE3055T
Packaging TypeTube
Packaging Quantity50
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
ConfigurationNPN
Gain Bandwidth2MHz
Life Cycle StatusActive
Maximum Collector Current10A
Maximum Collector Emitter Breakdown Voltage60V
Maximum Collector Emitter Saturation Voltage8V @ 3.3A, 10A
Maximum Cutoff Collector Current700µA
Maximum Operating Temperature150°C (TJ)
Maximum Power Dissipation75W
Minimum DC Current Gain20 @ 4A, 4V
Minimum Operating Temperature-55°C (TJ)
Package TypeTO-220-3
Technology TypeSI
Transistor TypeSingle