
MJE270G
MFR #MJE270G
FPN#MJE270G-FL
MFRonsemi
Part DescriptionBipolar (BJT) Transistor NPN - Darlington 100 V 2 A 6MHz 1.5 W Through Hole TO-126
Datasheet
Quote Only
Product Attributes
Main Category | Semiconductors |
Category | Discrete Semiconductors |
Sub Category | Transistors |
Family Name | MJE270G |
Packaging Type | Box |
Packaging Quantity | 500 |
Lifecycle Status | Active |
RoHS | Compliant with Exemption |
RoHS Exemption Type | 7(a), RoHS (2015/863) |
ROHS China | Not Compliant |
Reach Status | Not Compliant |
Configuration | NPN - Darlington |
Gain Bandwidth | 6MHz |
Life Cycle Status | Active |
Maximum Collector Base Voltage | 100V |
Maximum Collector Current | 2A |
Maximum Collector Emitter Breakdown Voltage | 100V |
Maximum Collector Emitter Saturation Voltage | 3V @ 1.2mA, 120mA |
Maximum Cutoff Collector Current | 1mA |
Maximum Emitter Base Voltage | 5V |
Maximum Operating Temperature | 150°C (TJ) |
Maximum Power Dissipation | 1.5W |
Minimum DC Current Gain | 1500 @ 120mA, 10V |
Minimum Operating Temperature | -65°C (TJ) |
Package Type | TO-225-3 |
Technology Type | SI |
Transistor Type | Single |