
onsemi
MJE270G
MFR #MJE270G
FPN#MJE270G-FL
MFRonsemi
Part DescriptionBipolar (BJT) Transistor NPN - Darlington 100 V 2 A 6MHz 1.5 W Through Hole TO-126
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | MJE270G |
| Packaging Type | Box |
| Packaging Quantity | 500 |
| Lifecycle Status | Active |
| ROHS | Compliant with Exemption |
| RoHs Exemption Type | 7(a), RoHS (2015/863) |
| RoHs China | Not Compliant |
| Reach Status | Not Compliant |
| Configuration | NPN - Darlington |
| Gain Bandwidth | 6MHz |
| Life Cycle Status | Active |
| Maximum Collector Base Voltage | 100V |
| Maximum Collector Current | 2A |
| Maximum Collector Emitter Breakdown Voltage | 100V |
| Maximum Collector Emitter Saturation Voltage | 3V @ 1.2mA, 120mA |
| Maximum Cutoff Collector Current | 1mA |
| Maximum Emitter Base Voltage | 5V |
| Maximum Operating Temperature | 150°C (TJ) |
| Maximum Power Dissipation | 1.5W |
| Minimum DC Current Gain | 1500 @ 120mA, 10V |
| Minimum Operating Temperature | -65°C (TJ) |
| Package Type | TO-225-3 |
| Technology Type | SI |
| Transistor Type | Single |
