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MJE200G
onsemi

MJE200G

MFR #MJE200G

FPN#MJE200G-FL

MFRonsemi

Part DescriptionBipolar (BJT) Transistor NPN 40V 5A 65MHz 15W Through Hole, TO-126-3
Datasheet
150358-Datasheet
Quote Onlymore info
Multiples of: 500more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameMJE200G
Packaging TypeBox
Packaging Quantity500
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
ConfigurationNPN
Gain Bandwidth65MHz
Life Cycle StatusActive
Maximum Collector Current5A
Maximum Collector Emitter Breakdown Voltage40V
Maximum Collector Emitter Saturation Voltage1.8V @ 1A, 5A
Maximum Cutoff Collector Current100nA (ICBO)
Maximum Operating Temperature150°C (TJ)
Maximum Power Dissipation15W
Minimum DC Current Gain70 @ 500mA, 1V
Minimum Operating Temperature-65°C (TJ)
Package TypeTO-225-3
Technology TypeSI
Transistor TypeSingle