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MJE181G
onsemi

MJE181G

MFR #MJE181G

FPN#MJE181G-FL

MFRonsemi

Part DescriptionBipolar (BJT) Transistor NPN 60 V 3 A 50MHz 1.5 W Through Hole TO-126
Datasheet
51983-Datasheet
Quote Onlymore info
Multiples of: 500more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameMJE181G
Packaging TypeBox
Packaging Quantity500
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
ConfigurationNPN
Gain Bandwidth50MHz
Life Cycle StatusActive
Maximum Collector Current3A
Maximum Collector Emitter Breakdown Voltage60V
Maximum Collector Emitter Saturation Voltage1.7V @ 600mA, 3A
Maximum Cutoff Collector Current100nA
Maximum Operating Temperature150°C (TJ)
Maximum Power Dissipation1.5W
Minimum DC Current Gain50 @ 100mA, 1V
Minimum Operating Temperature-65°C (TJ)
Package TypeTO-225-3
Technology TypeSI
Transistor TypeSingle