
MJE15029G
MFR #MJE15029G
FPN#MJE15029G-FL
MFRonsemi
Part DescriptionBipolar (BJT) Transistor PNP 120 V 8 A 30MHz 50 W Through Hole TO-220
Datasheet
Quote Only
Product Attributes
Main Category | Semiconductors |
Category | Discrete Semiconductors |
Sub Category | Transistors |
Family Name | MJE15029 |
Packaging Type | Tube |
Packaging Quantity | 50 |
Lifecycle Status | Active |
RoHS | Compliant with Exemption |
RoHS Exemption Type | 7(a), RoHS (2015/863) |
Reach Status | Not Compliant |
Configuration | PNP |
Gain Bandwidth | 30MHz |
Life Cycle Status | Active |
Maximum Collector Current | 8A |
Maximum Collector Emitter Breakdown Voltage | 120V |
Maximum Collector Emitter Saturation Voltage | 500mV @ 100mA, 1A |
Maximum Cutoff Collector Current | 100µA |
Maximum Operating Temperature | 150°C (TJ) |
Maximum Power Dissipation | 2W |
Minimum DC Current Gain | 40 @ 3A, 2V |
Minimum Operating Temperature | -65°C (TJ) |
Package Type | TO-220-3 |
Technology Type | SI |
Transistor Type | Single |