
MJE15029G
MFR #MJE15029G
FPN#MJE15029G-FL
MFRonsemi
Part DescriptionBipolar (BJT) Transistor PNP 120 V 8 A 30MHz 50 W Through Hole TO-220
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors | 
| Category | Discrete Semiconductors | 
| Sub Category | Transistors | 
| Family Name | MJE15029 | 
| Packaging Type | Tube | 
| Packaging Quantity | 50 | 
| Lifecycle Status | Active | 
| RoHS | Compliant with Exemption | 
| RoHS Exemption Type | 7(a), RoHS (2015/863) | 
| Reach Status | Not Compliant | 
| Configuration | PNP | 
| Gain Bandwidth | 30MHz | 
| Life Cycle Status | Active | 
| Maximum Collector Current | 8A | 
| Maximum Collector Emitter Breakdown Voltage | 120V | 
| Maximum Collector Emitter Saturation Voltage | 500mV @ 100mA, 1A | 
| Maximum Cutoff Collector Current | 100µA | 
| Maximum Operating Temperature | 150°C (TJ) | 
| Maximum Power Dissipation | 2W | 
| Minimum DC Current Gain | 40 @ 3A, 2V | 
| Minimum Operating Temperature | -65°C (TJ) | 
| Package Type | TO-220-3 | 
| Technology Type | SI | 
| Transistor Type | Single | 
