
MJE15029G
MFR #MJE15029G
FPN#MJE15029G-FL
MFRonsemi
Part DescriptionBipolar (BJT) Transistor PNP 120 V 8 A 30MHz 50 W Through Hole TO-220
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | MJE15029 |
| Packaging Type | Tube |
| Packaging Quantity | 50 |
| Lifecycle Status | Active |
| RoHS | Compliant with Exemption |
| RoHS Exemption Type | 7(a), RoHS (2015/863) |
| Reach Status | Not Compliant |
| Configuration | PNP |
| Gain Bandwidth | 30MHz |
| Life Cycle Status | Active |
| Maximum Collector Current | 8A |
| Maximum Collector Emitter Breakdown Voltage | 120V |
| Maximum Collector Emitter Saturation Voltage | 500mV @ 100mA, 1A |
| Maximum Cutoff Collector Current | 100µA |
| Maximum Operating Temperature | 150°C (TJ) |
| Maximum Power Dissipation | 2W |
| Minimum DC Current Gain | 40 @ 3A, 2V |
| Minimum Operating Temperature | -65°C (TJ) |
| Package Type | TO-220-3 |
| Technology Type | SI |
| Transistor Type | Single |
