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MJE15029G
onsemi

MJE15029G

MFR #MJE15029G

FPN#MJE15029G-FL

MFRonsemi

Part DescriptionBipolar (BJT) Transistor PNP 120 V 8 A 30MHz 50 W Through Hole TO-220
Datasheet
51978-Datasheet
Quote Onlymore info
Multiples of: 50more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameMJE15029
Packaging TypeTube
Packaging Quantity50
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Package TypeTO-220-3
ConfigurationPNP
Gain Bandwidth30MHz
Maximum Collector Current8A
Maximum Collector Emitter Breakdown Voltage120V
Maximum Collector Emitter Saturation Voltage500mV @ 100mA, 1A
Maximum Cutoff Collector Current100µA
Maximum DC Current GainN/A
Maximum Junction Temperature150°C
Maximum Operating TemperatureN/A
Maximum Power Dissipation2W
Minimum DC Current Gain40 @ 3A, 2V
Minimum Junction Temperature-65°C
Minimum Operating TemperatureN/A
Technology TypeSI
Transistor TypeSingle