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MJD5731T4G
onsemi

MJD5731T4G

MFR #MJD5731T4G

FPN#MJD5731T4G-FL

MFRonsemi

Part DescriptionBipolar (BJT) Transistor PNP 350 V 1 A 10MHz 1.56 W Surface Mount DPAK
Datasheet
51977-Datasheet
Quote Onlymore info
Multiples of: 2500more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameMJD5731
Packaging TypeTape and Reel
Packaging Quantity2500
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Package TypeDPAK
ConfigurationPNP
Gain Bandwidth10MHz
Maximum Collector Current1A
Maximum Collector Emitter Breakdown Voltage350V
Maximum Collector Emitter Saturation Voltage1V @ 200mA, 1A
Maximum Cutoff Collector Current100µA
Maximum Operating Temperature150°C (TJ)
Maximum Power Dissipation1.56W
Minimum DC Current Gain30 @ 300mA, 10V
Minimum Operating Temperature-55°C (TJ)
Technology TypeSI
Transistor TypeSingle