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MJD31T4G
onsemi

MJD31T4G

MFR #MJD31T4G

FPN#MJD31T4G-FL

MFRonsemi

Part DescriptionBipolar (BJT) Transistor NPN 40V 3A 3MHz 1.56W Surface Mount, TO-252-3
Datasheet
100988-Datasheet
Quote Onlymore info
Multiples of: 2500more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameMJD31
Packaging TypeTape and Reel
Packaging Quantity2500
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
ConfigurationNPN
Gain Bandwidth3MHz
Life Cycle StatusActive
Maximum Collector Current3A
Maximum Collector Emitter Breakdown Voltage40V
Maximum Collector Emitter Saturation Voltage1.2V @ 375mA, 3A
Maximum Cutoff Collector Current50µA
Maximum Operating Temperature150°C (TJ)
Maximum Power Dissipation1.56W
Minimum DC Current Gain25 @ 1A, 4V
Minimum Operating Temperature-65°C (TJ)
Package TypeDPAK
Technology TypeSI
Transistor TypeSingle