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MJD253T4G
onsemi

MJD253T4G

MFR #MJD253T4G

FPN#MJD253T4G-FL

MFRonsemi

Part DescriptionBipolar (BJT) Transistor PNP 100 V 4 A 40MHz 1.4 W Surface Mount DPAK
Datasheet
51965-Datasheet
Quote Onlymore info
Multiples of: 2500more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameMJD253
Packaging TypeTape and Reel
Packaging Quantity2500
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
ConfigurationPNP
Gain Bandwidth40MHz
Life Cycle StatusActive
Maximum Collector Current4A
Maximum Collector Emitter Breakdown Voltage100V
Maximum Collector Emitter Saturation Voltage600mV @ 100mA, 1A
Maximum Cutoff Collector Current100nA (ICBO)
Maximum Operating Temperature150°C (TJ)
Maximum Power Dissipation1.4W
Minimum DC Current Gain40 @ 200mA, 1V
Minimum Operating Temperature-65°C (TJ)
Package TypeDPAK
Technology TypeSI
Transistor TypeSingle