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MJD253-1G
onsemi

MJD253-1G

MFR #MJD253-1G

FPN#MJD253-1G-FL

MFRonsemi

Part DescriptionBipolar (BJT) Transistor PNP 100 V 4 A 40MHz 1.4 W Through Hole I-PAK
Datasheet
51964-Datasheet
Quote Onlymore info
Multiples of: 75more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameMJD253
Packaging TypeTube
Packaging Quantity75
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
ConfigurationPNP
Gain Bandwidth40MHz
Life Cycle StatusObsolete
Maximum Collector Current4A
Maximum Collector Emitter Breakdown Voltage100V
Maximum Collector Emitter Saturation Voltage600mV @ 100mA, 1A
Maximum Cutoff Collector Current100nA (ICBO)
Maximum Operating Temperature150°C (TJ)
Maximum Power Dissipation1.4W
Minimum DC Current Gain40 @ 200mA, 1V
Minimum Operating Temperature-65°C (TJ)
Package TypeI-Pak
Technology TypeSI
Transistor TypeSingle