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MJD112T4G
onsemi

MJD112T4G

MFR #MJD112T4G

FPN#MJD112T4G-FL

MFRonsemi

Part DescriptionBipolar (BJT) Transistor NPN - Darlington 100V 2A 25MHz 20W Surface Mount, TO-252-3
Datasheet
95854-Datasheet
Quote Onlymore info
Multiples of: 2500more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameMJD112
Packaging TypeTape and Reel
Packaging Quantity2500
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
ConfigurationNPN - Darlington
Gain Bandwidth25MHz
Life Cycle StatusActive
Maximum Collector Base Voltage100V
Maximum Collector Current2A
Maximum Collector Emitter Breakdown Voltage100V
Maximum Collector Emitter Saturation Voltage3V @ 40mA, 4A
Maximum Cutoff Collector Current20µA
Maximum Emitter Base Voltage5V
Maximum Operating Temperature150°C (TJ)
Maximum Power Dissipation20W
Minimum DC Current Gain1000 @ 2A, 3V
Minimum Operating Temperature-65°C (TJ)
Package TypeDPAK
Technology TypeSI
Transistor TypeSingle