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MJD112G
onsemi

MJD112G

MFR #MJD112G

FPN#MJD112G-FL

MFRonsemi

Part DescriptionBipolar (BJT) Transistor NPN - Darlington 100 V 2 A 25MHz 1.75 W Surface Mount DPAK
Datasheet
51958-Datasheet
Quote Onlymore info
Multiples of: 75more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameMJD112
Packaging TypeTube
Packaging Quantity75
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
ConfigurationNPN - Darlington
Gain Bandwidth25MHz
Life Cycle StatusActive
Maximum Collector Base Voltage100V
Maximum Collector Current2A
Maximum Collector Emitter Breakdown Voltage100V
Maximum Collector Emitter Saturation Voltage3V @ 40mA, 4A
Maximum Cutoff Collector Current20µA
Maximum Emitter Base Voltage5V
Maximum Operating Temperature150°C (TJ)
Maximum Power Dissipation20W
Minimum DC Current Gain1000 @ 2A, 3V
Minimum Operating Temperature-65°C (TJ)
Package TypeDPAK
Technology TypeSI
Transistor TypeSingle