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onsemi

MJ11012G

MFR #MJ11012G

FPN#MJ11012G-FL

MFRonsemi

Part DescriptionBipolar (BJT) Transistor NPN - Darlington 60 V 30 A 4MHz 200 W Through Hole TO-204 (TO-3)
Datasheet
51952-Datasheet
Quote Onlymore info
Multiples of: 100more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameMJ11012
Packaging TypeTray
Packaging Quantity100
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
ConfigurationNPN - Darlington
Gain Bandwidth4MHz
Life Cycle StatusActive
Maximum Collector Base Voltage60V
Maximum Collector Current30A
Maximum Collector Emitter Breakdown Voltage60V
Maximum Collector Emitter Saturation Voltage4V @ 300mA, 30A
Maximum Cutoff Collector Current1mA
Maximum Emitter Base Voltage5V
Maximum Operating Temperature200°C (TJ)
Maximum Power Dissipation200W
Minimum DC Current Gain1000 @ 20A, 5V
Minimum Operating Temperature-55°C (TJ)
Package TypeTO-204 (TO-3)
Technology TypeSI
Transistor TypeSingle