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onsemi

MJ11012G

MFR #MJ11012G

FPN#MJ11012G-FL

MFRonsemi

Part DescriptionBipolar (BJT) Transistor NPN - Darlington 60 V 30 A 4MHz 200 W Through Hole TO-204 (TO-3)
Datasheet
51952-Datasheet
Quote Onlymore info
Multiples of: 100more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameMJ11012
Packaging TypeTray
Packaging Quantity100
Lifecycle StatusActive
ROHSCompliant with Exemption
RoHs Exemption Type7(a), RoHS (2015/863)
RoHs ChinaNot Compliant
Reach StatusNot Compliant
ConfigurationNPN - Darlington
Gain Bandwidth4MHz
Life Cycle StatusActive
Maximum Collector Base Voltage60V
Maximum Collector Current30A
Maximum Collector Emitter Breakdown Voltage60V
Maximum Collector Emitter Saturation Voltage4V @ 300mA, 30A
Maximum Cutoff Collector Current1mA
Maximum Emitter Base Voltage5V
Maximum Operating Temperature200°C (TJ)
Maximum Power Dissipation200W
Minimum DC Current Gain1000 @ 20A, 5V
Minimum Operating Temperature-55°C (TJ)
Package TypeTO-204 (TO-3)
Technology TypeSI
Transistor TypeSingle