MHT2012NT1
MFR #MHT2012NT1
FPN#MHT2012NT1-FL
MFRNXP
Part DescriptionRF MOSFET LDMOS (Dual) 65V 2.5GHz 15mA, 75mA Surface Mount 24-QFN
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | MHT2012N |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 1000 |
| Lifecycle Status | Active (NRND) |
| ROHS | Compliant with Exemption |
| RoHs Exemption Type | 7(a), RoHS (2015/863) |
| Reach Status | Not Compliant |
| 1dB Compression Point (P1dB) | 42.4dBm |
| 3dB Compression Point (P3dB) | 43dBm |
| Channel Mode | Enhancement |
| Configuration | 2 N-Channel |
| Gain | 29.7dB |
| Gate to Source Voltage | +10V, -500mV |
| Life Cycle Status | Active (NRND) |
| Maximum Continuous Drain Current | 1µA |
| Maximum Junction Temperature | 150°C |
| Maximum Operating Frequency | 2.5GHz |
| Maximum Operating Temperature | 150°C (TC) |
| Maximum Output Power | N/A |
| Minimum Junction Temperature | -40°C |
| Minimum Operating Frequency | 2.4GHz |
| Minimum Operating Temperature | -40°C (TC) |
| Noise Figure | N/A |
| Noise Test Current | 15mA, 75mA |
| Noise Test Voltage | 28V |
| Number of Element per Chip | 2 |
| Package Type | 24-PQFN-EP (8x8) |
| Signal Type | Continuous Wave, Pulse |
| Technology Type | N/A |
| Transistor Type | LDMOS |
| Typical Output Power | 12.5W |
| Voltage Rating | 65V |