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MGSF2N02ELT1G
onsemi

MGSF2N02ELT1G

MFR #MGSF2N02ELT1G

FPN#MGSF2N02ELT1G-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 20V 2.8A (Ta) SOT-23-3
Datasheet
145134-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameMGSF2N02EL
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage20V
Drive Voltage2.5V, 4.5V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±8V
Input Capacitance150pF
Input Capacitance Test Voltage5V
Life Cycle StatusActive
Maximum Continuous Drain Current2.8A (Ta)
Maximum Drain to Source Resistance85 mOhm @ 3.6A, 4.5V
Maximum Gate to Source Threshold Voltage1V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation1.25W (Ta)
Maximum Pulse Drain Current5A
Maximum Total Gate Charge3.5nC
Maximum Total Gate Charge Test Voltage4V
Minimum Junction Temperature-55°C (TJ)
Package TypeSOT-23-3 (TO-236)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge1.5nC
Typical Gate to Source Charge600pC