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MGSF1N02LT1G
onsemi

MGSF1N02LT1G

MFR #MGSF1N02LT1G

FPN#MGSF1N02LT1G-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 20V 750mA (Ta) 400mW (Ta) Surface Mount, TO-236-3
Datasheet
51852-Datasheet
Quote Only
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Multiples of: 3000
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Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameMGSF1N02L
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
ROHSCompliant
RoHs Exemption TypeNone, RoHS (2015/863)
RoHs ChinaCompliant
Reach StatusCompliant
Package TypeSOT-23-3 (TO-236)
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage20V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance125pF
Input Capacitance Test Voltage5V
Maximum Continuous Drain Current750mA (Ta)
Maximum Drain to Source Resistance90 mOhm @ 1.2A, 10V
Maximum Gate to Source Threshold Voltage2.4V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation400mW (Ta)
Maximum Pulse Drain Current2A
Maximum Total Gate ChargeN/A
Maximum Total Gate Charge Test VoltageN/A
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain ChargeN/A
Typical Gate to Source ChargeN/A