MCH6431-TL-W
MFR #MCH6431-TL-W
FPN#MCH6431-TL-W-FL
MFRonsemi
Part DescriptionPower Field-Effect Transistor, 5A I(D), 30V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | MCH6431 |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 3000 |
| Lifecycle Status | Obsolete |
| RoHS | Compliant with Exemption |
| RoHS Exemption Type | 7(a), RoHS (2015/863) |
| ROHS China | Not Compliant |
| Reach Status | Not Compliant |
| Channel Mode | Enhancement |
| Configuration | N-Channel |
| Drain Source Voltage | 30V |
| Drive Voltage | 4V, 10V |
| FET Feature | N/R |
| FET Options | N/R |
| FET Type | Single |
| Gate to Source Voltage | ±20V |
| Input Capacitance | N/A |
| Input Capacitance Test Voltage | 10V |
| Life Cycle Status | Obsolete |
| Maximum Continuous Drain Current | 5A (Ta) |
| Maximum Drain to Source Resistance | 55 mOhm @ 2.5A, 10V |
| Maximum Gate to Source Threshold Voltage | 2.6V @ 1mA |
| Maximum Junction Temperature | 150°C (TJ) |
| Maximum Power Dissipation | 1.5W (Ta) |
| Maximum Pulse Drain Current | N/A |
| Maximum Total Gate Charge | 5.6nC |
| Maximum Total Gate Charge Test Voltage | 10V |
| Minimum Junction Temperature | N/A |
| Package Type | SC-88FL/ MCPH6 |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 800pC |
| Typical Gate to Source Charge | 1.2nC |