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onsemi

MCH3333A-TL-W

MFR #MCH3333A-TL-W

FPN#MCH3333A-TL-W-FL

MFRonsemi

Part DescriptionSmall Signal Field-Effect Transistor, 2A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Datasheet
100061-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameMCH3333A
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationP-Channel
Drain Source Voltage30V
Drive Voltage1.8V, 4V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±10V
Input Capacitance240pF
Input Capacitance Test Voltage10V
Life Cycle StatusObsolete
Maximum Continuous Drain Current2A (Ta)
Maximum Drain to Source Resistance215 mOhm @ 1A, 4V
Maximum Gate to Source Threshold Voltage1.3V @ 1mA
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation900mW (Ta)
Maximum Pulse Drain CurrentN/A
Maximum Total Gate Charge2.8nC
Maximum Total Gate Charge Test Voltage4V
Minimum Junction TemperatureN/A
Minimum Operating TemperatureN/A
Package TypeSC-70FL/MCPH3
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge950pC
Typical Gate to Source Charge300pC