(404) 551-4447EMEA TeamContact UsAbout UsCareers
loading content
onsemi

MCH3312-TL-E

MFR #MCH3312-TL-E

FPN#MCH3312-TL-E-FL

MFRonsemi

Part DescriptionP-Channel 30 V 2A (Ta) 1W (Ta) Surface Mount 3-MCPH
Datasheet
51426-Datasheet
Quote Onlymore info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameMCH3312
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationP-Channel
Drain Source Voltage30V
Drive Voltage4V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance200pF
Input Capacitance Test Voltage10V
Life Cycle StatusObsolete
Maximum Continuous Drain Current2A (Ta)
Maximum Drain to Source Resistance145 mOhm @ 1A, 10V
Maximum Gate to Source Threshold Voltage2.6V @ 1mA
Maximum Junction Temperature150°C
Maximum Power Dissipation1W (Ta)
Maximum Pulse Drain Current8A
Maximum Total Gate Charge5.5nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction TemperatureN/A
Package Type3-MCPH
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge820pC
Typical Gate to Source Charge980pC