
MCH3312-TL-E
MFR #MCH3312-TL-E
FPN#MCH3312-TL-E-FL
MFRonsemi
Part DescriptionP-Channel 30 V 2A (Ta) 1W (Ta) Surface Mount 3-MCPH
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors | 
| Category | Discrete Semiconductors | 
| Sub Category | Transistors | 
| Family Name | MCH3312 | 
| Lifecycle Status | Obsolete | 
| RoHS | Compliant with Exemption | 
| RoHS Exemption Type | 7(a), RoHS (2015/863) | 
| ROHS China | Not Compliant | 
| Reach Status | Not Compliant | 
| Channel Mode | Enhancement | 
| Configuration | P-Channel | 
| Drain Source Voltage | 30V | 
| Drive Voltage | 4V, 10V | 
| FET Feature | N/R | 
| FET Options | N/R | 
| FET Type | Single | 
| Gate to Source Voltage | ±20V | 
| Input Capacitance | 200pF | 
| Input Capacitance Test Voltage | 10V | 
| Life Cycle Status | Obsolete | 
| Maximum Continuous Drain Current | 2A (Ta) | 
| Maximum Drain to Source Resistance | 145 mOhm @ 1A, 10V | 
| Maximum Gate to Source Threshold Voltage | 2.6V @ 1mA | 
| Maximum Junction Temperature | 150°C | 
| Maximum Operating Temperature | 150°C | 
| Maximum Power Dissipation | 1W (Ta) | 
| Maximum Pulse Drain Current | 8A | 
| Maximum Total Gate Charge | 5.5nC | 
| Maximum Total Gate Charge Test Voltage | 10V | 
| Minimum Junction Temperature | N/A | 
| Minimum Operating Temperature | N/A | 
| Package Type | 3-MCPH | 
| Technology | MOSFET (Metal Oxide) | 
| Typical Gate to Drain Charge | 820pC | 
| Typical Gate to Source Charge | 980pC | 
