
onsemi
MCH3312-TL-E
MFR #MCH3312-TL-E
FPN#MCH3312-TL-E-FL
MFRonsemi
Part DescriptionP-Channel 30 V 2A (Ta) 1W (Ta) Surface Mount 3-MCPH
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | MCH3312 |
| Lifecycle Status | Obsolete |
| RoHS | Compliant with Exemption |
| RoHS Exemption Type | 7(a), RoHS (2015/863) |
| ROHS China | Not Compliant |
| Reach Status | Not Compliant |
| Channel Mode | Enhancement |
| Configuration | P-Channel |
| Drain Source Voltage | 30V |
| Drive Voltage | 4V, 10V |
| FET Feature | N/R |
| FET Options | N/R |
| FET Type | Single |
| Gate to Source Voltage | ±20V |
| Input Capacitance | 200pF |
| Input Capacitance Test Voltage | 10V |
| Life Cycle Status | Obsolete |
| Maximum Continuous Drain Current | 2A (Ta) |
| Maximum Drain to Source Resistance | 145 mOhm @ 1A, 10V |
| Maximum Gate to Source Threshold Voltage | 2.6V @ 1mA |
| Maximum Junction Temperature | 150°C |
| Maximum Operating Temperature | 150°C |
| Maximum Power Dissipation | 1W (Ta) |
| Maximum Pulse Drain Current | 8A |
| Maximum Total Gate Charge | 5.5nC |
| Maximum Total Gate Charge Test Voltage | 10V |
| Minimum Junction Temperature | N/A |
| Minimum Operating Temperature | N/A |
| Package Type | 3-MCPH |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 820pC |
| Typical Gate to Source Charge | 980pC |
