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KSD882YSTU
onsemi

KSD882YSTU

MFR #KSD882YSTU

FPN#KSD882YSTU-FL

MFRonsemi

Part DescriptionBipolar (BJT) Transistor NPN 30 V 3 A 90MHz 1 W Through Hole TO-126-3
Datasheet
47601-Datasheet
Quote Onlymore info
Multiples of: 1920more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameKSD882
Packaging TypeTube
Packaging Quantity1920
Lifecycle StatusObsolete
ROHSCompliant
RoHs Exemption TypeNone, RoHS (2015/863)
RoHs ChinaCompliant
Reach StatusCompliant
ConfigurationNPN
Gain Bandwidth90MHz
Life Cycle StatusObsolete
Maximum Collector Current3A
Maximum Collector Emitter Breakdown Voltage30V
Maximum Collector Emitter Saturation Voltage500mV @ 200mA, 2A
Maximum Cutoff Collector Current1µA (ICBO)
Maximum Operating Temperature150°C (TJ)
Maximum Power Dissipation1W
Minimum DC Current Gain160 @ 1A, 2V
Minimum Operating Temperature-55°C (TJ)
Package TypeTO-126-3
Technology TypeSI
Transistor TypeSingle