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KSD882YS
onsemi

KSD882YS

MFR #KSD882YS

FPN#KSD882YS-FL

MFRonsemi

Part DescriptionBipolar (BJT) Transistor NPN 30 V 3 A 90MHz 1 W Through Hole TO-126-3
Datasheet
47600-Datasheet
Quote Onlymore info
Multiples of: 2000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameKSD882
Packaging TypeBag
Packaging Quantity2000
Lifecycle StatusObsolete
RoHSCompliant
RoHS Exemption TypeRoHS (2015/863)
Reach StatusNot Compliant
Package TypeTO-126-3
ConfigurationNPN
Gain Bandwidth90MHz
Maximum Collector Current3A
Maximum Collector Emitter Breakdown Voltage30V
Maximum Collector Emitter Saturation Voltage500mV @ 200mA, 2A
Maximum Cutoff Collector Current1µA (ICBO)
Maximum DC Current Gain400 @ 1A, 2V
Maximum Junction Temperature150°C
Maximum Operating TemperatureN/A
Maximum Power Dissipation1W
Minimum DC Current Gain60 @ 1A, 2V
Minimum Junction Temperature-55°C
Minimum Operating TemperatureN/A
Technology TypeSI
Transistor TypeSingle