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KSD882YS

KSD882YS

MFR #KSD882YS

FPN#KSD882YS-FL

MFRonsemi

Part DescriptionBipolar (BJT) Transistor NPN 30 V 3 A 90MHz 1 W Through Hole TO-126-3
Quote Onlymore info
Multiples of: 2000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameKSD882
Packaging TypeBag
Packaging Quantity2000
Lifecycle StatusObsolete
RoHSCompliant
RoHS Exemption TypeRoHS (2015/863)
Reach StatusNot Compliant
ConfigurationNPN
Gain Bandwidth90MHz
Life Cycle StatusObsolete
Maximum Collector Current3A
Maximum Collector Emitter Breakdown Voltage30V
Maximum Collector Emitter Saturation Voltage500mV @ 200mA, 2A
Maximum Cutoff Collector Current1µA (ICBO)
Maximum Operating Temperature150°C (TJ)
Maximum Power Dissipation1W
Minimum DC Current Gain160 @ 1A, 2V
Minimum Operating Temperature-55°C (TJ)
Package TypeTO-126-3
Technology TypeSI
Transistor TypeSingle