
onsemi
KSD560YTU
MFR #KSD560YTU
FPN#KSD560YTU-FL
MFRonsemi
Part DescriptionBipolar (BJT) Transistor NPN - Darlington 100 V 5 A 1.5 W Through Hole TO-220-3
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | KSD560 |
| Packaging Type | Tube |
| Packaging Quantity | 1000 |
| Lifecycle Status | Active |
| ROHS | Compliant with Exemption |
| RoHs Exemption Type | 7(a), RoHS (2015/863) |
| RoHs China | Not Compliant |
| Reach Status | Not Compliant |
| Configuration | NPN - Darlington |
| Gain Bandwidth | N/A |
| Life Cycle Status | Active |
| Maximum Collector Base Voltage | 150V |
| Maximum Collector Current | 5A |
| Maximum Collector Emitter Breakdown Voltage | 100V |
| Maximum Collector Emitter Saturation Voltage | 1.5V |
| Maximum Cutoff Collector Current | 1µA |
| Maximum Emitter Base Voltage | 7V |
| Maximum Operating Temperature | 150°C (TJ) |
| Maximum Power Dissipation | 1.5W |
| Minimum DC Current Gain | 5000 @ 3A, 2V |
| Minimum Operating Temperature | N/A |
| Package Type | TO-220-3 |
| Technology Type | SI |
| Transistor Type | Single |
