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KSD363YTU
onsemi

KSD363YTU

MFR #KSD363YTU

FPN#KSD363YTU-FL

MFRonsemi

Part DescriptionBipolar (BJT) Transistor NPN 120 V 6 A 10MHz 40 W Through Hole TO-220-3
Datasheet
47588-Datasheet
Quote Onlymore info
Multiples of: 1000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameKSD363
Packaging TypeTube
Packaging Quantity1000
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
ConfigurationNPN
Gain Bandwidth10MHz
Life Cycle StatusObsolete
Maximum Collector Current6A
Maximum Collector Emitter Breakdown Voltage120V
Maximum Collector Emitter Saturation Voltage1V @ 100mA, 1A
Maximum Cutoff Collector Current1mA
Maximum Operating Temperature150°C (TJ)
Maximum Power Dissipation40W
Minimum DC Current Gain120 @ 1A, 5V
Minimum Operating TemperatureN/A
Package TypeTO-220-3
Technology TypeSI
Transistor TypeSingle