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KSD2012GTU
onsemi

KSD2012GTU

MFR #KSD2012GTU

FPN#KSD2012GTU-FL

MFRonsemi

Part DescriptionPower Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
Datasheet
101200-Datasheet
Quote Onlymore info
Multiples of: 1000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameKSD2012
Packaging TypeTube
Packaging Quantity1000
Lifecycle StatusActive
ROHSCompliant with Exemption
RoHs Exemption Type7(a), RoHS (2015/863)
RoHs ChinaNot Compliant
Reach StatusNot Compliant
ConfigurationNPN
Gain Bandwidth3MHz
Life Cycle StatusActive
Maximum Collector Current3A
Maximum Collector Emitter Breakdown Voltage60V
Maximum Collector Emitter Saturation Voltage1V @ 200mA, 2A
Maximum Cutoff Collector Current100µA
Maximum Operating Temperature150°C (TJ)
Maximum Power Dissipation25W
Minimum DC Current Gain150 @ 500mA, 5V
Minimum Operating TemperatureN/A
Package TypeTO-220-3 Fullpack/TO-220F-3SG
Technology TypeSI
Transistor TypeSingle