
KSD2012GTU
MFR #KSD2012GTU
FPN#KSD2012GTU-FL
MFRonsemi
Part DescriptionPower Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
Datasheet
Quote Only
Product Attributes
Main Category | Semiconductors |
Category | Discrete Semiconductors |
Sub Category | Transistors |
Family Name | KSD2012 |
Packaging Type | Tube |
Packaging Quantity | 1000 |
Lifecycle Status | Active |
RoHS | Compliant with Exemption |
RoHS Exemption Type | 7(a), RoHS (2015/863) |
ROHS China | Not Compliant |
Reach Status | Not Compliant |
Configuration | NPN |
Gain Bandwidth | 3MHz |
Life Cycle Status | Active |
Maximum Collector Current | 3A |
Maximum Collector Emitter Breakdown Voltage | 60V |
Maximum Collector Emitter Saturation Voltage | 1V @ 200mA, 2A |
Maximum Cutoff Collector Current | 100µA |
Maximum Operating Temperature | 150°C (TJ) |
Maximum Power Dissipation | 25W |
Minimum DC Current Gain | 150 @ 500mA, 5V |
Minimum Operating Temperature | N/A |
Package Type | TO-220-3 Fullpack/TO-220F-3SG |
Technology Type | SI |
Transistor Type | Single |