
KSD2012GTU
MFR #KSD2012GTU
FPN#KSD2012GTU-FL
MFRonsemi
Part DescriptionPower Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors | 
| Category | Discrete Semiconductors | 
| Sub Category | Transistors | 
| Family Name | KSD2012 | 
| Packaging Type | Tube | 
| Packaging Quantity | 1000 | 
| Lifecycle Status | Active | 
| RoHS | Compliant with Exemption | 
| RoHS Exemption Type | 7(a), RoHS (2015/863) | 
| ROHS China | Not Compliant | 
| Reach Status | Not Compliant | 
| Configuration | NPN | 
| Gain Bandwidth | 3MHz | 
| Life Cycle Status | Active | 
| Maximum Collector Current | 3A | 
| Maximum Collector Emitter Breakdown Voltage | 60V | 
| Maximum Collector Emitter Saturation Voltage | 1V @ 200mA, 2A | 
| Maximum Cutoff Collector Current | 100µA | 
| Maximum Operating Temperature | 150°C (TJ) | 
| Maximum Power Dissipation | 25W | 
| Minimum DC Current Gain | 150 @ 500mA, 5V | 
| Minimum Operating Temperature | N/A | 
| Package Type | TO-220-3 Fullpack/TO-220F-3SG | 
| Technology Type | SI | 
| Transistor Type | Single | 
