
KSD1692YS
MFR #KSD1692YS
FPN#KSD1692YS-FL
MFRonsemi
Part DescriptionBipolar (BJT) Transistor NPN - Darlington 100 V 3 A 1.3 W Through Hole TO-126-3
Datasheet
Quote Only
Product Attributes
Main Category | Semiconductors |
Category | Discrete Semiconductors |
Sub Category | Transistors |
Family Name | KSD1692 |
Packaging Type | Bag |
Packaging Quantity | 2000 |
Lifecycle Status | Active |
RoHS | Compliant with Exemption |
RoHS Exemption Type | 7(a), RoHS (2015/863) |
ROHS China | Not Compliant |
Reach Status | Not Compliant |
Configuration | NPN - Darlington |
Gain Bandwidth | N/A |
Life Cycle Status | Active |
Maximum Collector Base Voltage | 150V |
Maximum Collector Current | 3A |
Maximum Collector Emitter Breakdown Voltage | 100V |
Maximum Collector Emitter Saturation Voltage | 1.2V |
Maximum Cutoff Collector Current | 10µA |
Maximum Emitter Base Voltage | 8V |
Maximum Operating Temperature | 150°C (TJ) |
Maximum Power Dissipation | 1.3W |
Minimum DC Current Gain | 4000 @ 1.5A, 2V |
Minimum Operating Temperature | N/A |
Package Type | TO-126-3 |
Technology Type | SI |
Transistor Type | Single |