
KSD1692YS
MFR #KSD1692YS
FPN#KSD1692YS-FL
MFRonsemi
Part DescriptionBipolar (BJT) Transistor NPN - Darlington 100 V 3 A 1.3 W Through Hole TO-126-3
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | KSD1692 |
| Packaging Type | Bag |
| Packaging Quantity | 2000 |
| Lifecycle Status | Active |
| RoHS | Compliant with Exemption |
| RoHS Exemption Type | 7(a), RoHS (2015/863) |
| ROHS China | Not Compliant |
| Reach Status | Not Compliant |
| Configuration | NPN - Darlington |
| Gain Bandwidth | N/A |
| Life Cycle Status | Active |
| Maximum Collector Base Voltage | 150V |
| Maximum Collector Current | 3A |
| Maximum Collector Emitter Breakdown Voltage | 100V |
| Maximum Collector Emitter Saturation Voltage | 1.2V |
| Maximum Cutoff Collector Current | 10µA |
| Maximum Emitter Base Voltage | 8V |
| Maximum Operating Temperature | 150°C (TJ) |
| Maximum Power Dissipation | 1.3W |
| Minimum DC Current Gain | 4000 @ 1.5A, 2V |
| Minimum Operating Temperature | N/A |
| Package Type | TO-126-3 |
| Technology Type | SI |
| Transistor Type | Single |
