
KSB596YTU
MFR #KSB596YTU
FPN#KSB596YTU-FL
MFRonsemi
Part DescriptionBipolar (BJT) Transistor PNP 80 V 4 A 3MHz 30 W Through Hole TO-220-3
Datasheet
Quote Only
Product Attributes
Main Category | Semiconductors |
Category | Discrete Semiconductors |
Sub Category | Transistors |
Family Name | KSB596 |
Packaging Type | Tube |
Packaging Quantity | 1000 |
Lifecycle Status | Obsolete |
RoHS | Compliant with Exemption |
RoHS Exemption Type | 7(a), RoHS (2015/863) |
ROHS China | Not Compliant |
Reach Status | Not Compliant |
Configuration | PNP |
Gain Bandwidth | 3MHz |
Life Cycle Status | Obsolete |
Maximum Collector Current | 4A |
Maximum Collector Emitter Breakdown Voltage | 80V |
Maximum Collector Emitter Saturation Voltage | 1.7V @ 300mA, 3A |
Maximum Cutoff Collector Current | 70µA |
Maximum Operating Temperature | 150°C (TJ) |
Maximum Power Dissipation | 30W |
Minimum DC Current Gain | 40 @ 500mA, 5V |
Minimum Operating Temperature | N/A |
Package Type | TO-220-3 |
Technology Type | SI |
Transistor Type | Single |