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KSB1151YS

KSB1151YS

MFR #KSB1151YS

FPN#KSB1151YS-FL

MFRonsemi

Part DescriptionBipolar (BJT) Transistor PNP 60 V 5 A 1.3 W Through Hole TO-126-3
Quote Onlymore info
Multiples of: 2000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameKSB1151
Packaging TypeBag
Packaging Quantity2000
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
ConfigurationPNP
Gain BandwidthN/A
Life Cycle StatusObsolete
Maximum Collector Current5A
Maximum Collector Emitter Breakdown Voltage60V
Maximum Collector Emitter Saturation Voltage300mV @ 200mA, 2A
Maximum Cutoff Collector Current10µA (ICBO)
Maximum Operating Temperature150°C (TJ)
Maximum Power Dissipation1.3W
Minimum DC Current Gain160 @ 2A, 1V
Minimum Operating TemperatureN/A
Package TypeTO-126-3
Technology TypeSI
Transistor TypeSingle