
KSB1151YS
MFR #KSB1151YS
FPN#KSB1151YS-FL
MFRonsemi
Part DescriptionBipolar (BJT) Transistor PNP 60 V 5 A 1.3 W Through Hole TO-126-3
Datasheet
Quote Only
Product Attributes
Main Category | Semiconductors |
Category | Discrete Semiconductors |
Sub Category | Transistors |
Family Name | KSB1151 |
Packaging Type | Bag |
Packaging Quantity | 2000 |
Lifecycle Status | Obsolete |
RoHS | Compliant with Exemption |
RoHS Exemption Type | 7(a), RoHS (2015/863) |
ROHS China | Not Compliant |
Reach Status | Not Compliant |
Configuration | PNP |
Gain Bandwidth | N/A |
Life Cycle Status | Obsolete |
Maximum Collector Current | 5A |
Maximum Collector Emitter Breakdown Voltage | 60V |
Maximum Collector Emitter Saturation Voltage | 300mV @ 200mA, 2A |
Maximum Cutoff Collector Current | 10µA (ICBO) |
Maximum Operating Temperature | 150°C (TJ) |
Maximum Power Dissipation | 1.3W |
Minimum DC Current Gain | 160 @ 2A, 1V |
Minimum Operating Temperature | N/A |
Package Type | TO-126-3 |
Technology Type | SI |
Transistor Type | Single |