
KSB1017YTU
MFR #KSB1017YTU
FPN#KSB1017YTU-FL
MFRonsemi
Part DescriptionBipolar (BJT) Transistor PNP 80 V 4 A 9MHz 25 W Through Hole TO-220F-3
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors | 
| Category | Discrete Semiconductors | 
| Sub Category | Transistors | 
| Family Name | KSB1017 | 
| Packaging Type | Tube | 
| Packaging Quantity | 1000 | 
| Lifecycle Status | Obsolete | 
| RoHS | Compliant with Exemption | 
| RoHS Exemption Type | 7(a), RoHS (2015/863) | 
| ROHS China | Not Compliant | 
| Reach Status | Not Compliant | 
| Configuration | PNP | 
| Gain Bandwidth | 9MHz | 
| Life Cycle Status | Obsolete | 
| Maximum Collector Current | 4A | 
| Maximum Collector Emitter Breakdown Voltage | 80V | 
| Maximum Collector Emitter Saturation Voltage | 1.7V @ 300mA, 3A | 
| Maximum Cutoff Collector Current | 30µA | 
| Maximum Operating Temperature | 150°C (TJ) | 
| Maximum Power Dissipation | 25W | 
| Minimum DC Current Gain | 120 @ 500mA, 5V | 
| Minimum Operating Temperature | N/A | 
| Package Type | TO-220-3 Fullpack/TO-220F-3SG | 
| Technology Type | SI | 
| Transistor Type | Single | 
