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IRFZ34NSPBF
Infineon

IRFZ34NSPBF

MFR #IRFZ34NSPBF

FPN#IRFZ34NSPBF-FL

MFRInfineon

Part DescriptionN-Channel MOSFET 55V 29A (Tc) 3.8W (Ta), 68W (Tc) Surface Mount, TO-263-3
Datasheet
46837-Datasheet
Quote Onlymore info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameIRFZ34NS
Packaging TypeTube
Packaging Quantity1000
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage55V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance700pF
Input Capacitance Test Voltage25V
Life Cycle StatusObsolete
Maximum Continuous Drain Current29A (Tc)
Maximum Drain to Source Resistance40 mOhm @ 16A, 10V
Maximum Gate to Source Threshold Voltage4V @ 250µA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation3.8W (Ta), 68W (Tc)
Maximum Pulse Drain Current100A
Maximum Total Gate Charge34nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeD2PAK
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge14nC
Typical Gate to Source Charge6.8nC