(404) 551-4447EMEA TeamContact UsAbout UsCareers
loading content
Infineon

IRFF130

MFR #IRFF130

FPN#IRFF130-FL

MFRInfineon

Part DescriptionMOSFET N-Channel 100V 8A (Tc) Through Hole, TO-205AF-3

Legacy ManufacturerCypress Semiconductor

Datasheet
46803-Datasheet
Quote Onlymore info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameIRFF130
Lifecycle StatusActive
ROHSNot Compliant
RoHs Exemption TypeRoHS (2015/863)
RoHs ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage100V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance650pF
Input Capacitance Test Voltage25V
Life Cycle StatusActive
Maximum Continuous Drain Current8A (Tc)
Maximum Drain to Source Resistance195 mOhm @ 8A, 10V
Maximum Gate to Source Threshold Voltage4V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation25W (Tc)
Maximum Pulse Drain Current32A
Maximum Total Gate Charge28.51nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
Package TypeTO-205AF (TO-39)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge16.59nC
Typical Gate to Source Charge6.34nC