IRF8252PBF
MFR #IRF8252PBF
FPN#IRF8252PBF-FL
MFRInfineon
Part DescriptionMOSFET N-CH 25V 25A 8SO
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | IRF8252 |
| Lifecycle Status | Obsolete |
| RoHS | Compliant |
| RoHS Exemption Type | None, RoHS (2015/863) |
| Reach Status | Compliant |
| Channel Mode | Enhancement |
| Configuration | N-Channel |
| Drain Source Voltage | 25V |
| Drive Voltage | 4.5V, 10V |
| FET Feature | N/R |
| FET Options | N/R |
| FET Type | Single |
| Gate to Source Voltage | ±20V |
| Input Capacitance | 5305pF |
| Input Capacitance Test Voltage | 13V |
| Life Cycle Status | Obsolete |
| Maximum Continuous Drain Current | 25A (Ta) |
| Maximum Drain to Source Resistance | 2.7 mOhm @ 25A, 10V |
| Maximum Gate to Source Threshold Voltage | 2.35V @ 100µA |
| Maximum Junction Temperature | 150°C (TJ) |
| Maximum Power Dissipation | 2.5W (Ta) |
| Maximum Pulse Drain Current | 200A |
| Maximum Total Gate Charge | 53nC |
| Maximum Total Gate Charge Test Voltage | 4.5V |
| Minimum Junction Temperature | -55°C (TJ) |
| PK Package Dimensions Note | Popular package size 61% from Suppliers use this Dimension |
| Package Type | 8-SO |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 12nC |
| Typical Gate to Source Charge | 10nC |