(404) 551-4447EMEA TeamContact UsAbout UsCareers
loading content
IRF3709SPBF
Infineon

IRF3709SPBF

MFR #IRF3709SPBF

FPN#IRF3709SPBF-FL

MFRInfineon

Part DescriptionMOSFET N-Channel 30V 90A (Tc) TO-263-3
Datasheet
46754-Datasheet
Quote Onlymore info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameIRF3709S
Packaging TypeTube
Packaging Quantity1000
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage30V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance2672pF
Input Capacitance Test Voltage16V
Life Cycle StatusObsolete
Maximum Continuous Drain Current90A (Tc)
Maximum Drain to Source Resistance9 mOhm @ 15A, 10V
Maximum Gate to Source Threshold Voltage3V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation3.1W (Ta), 120W (Tc)
Maximum Pulse Drain Current360A
Maximum Total Gate Charge41nC
Maximum Total Gate Charge Test Voltage5V
Minimum Junction Temperature-55°C (TJ)
Package TypeD2PAK
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge9.7nC
Typical Gate to Source Charge6.7nC