onsemi
HUFA76407DK8T-F085
MFR #HUFA76407DK8T-F085
FPN#HUFA76407DK8T-F085-FL
MFRonsemi
Part DescriptionMOSFET 2N-CH 60V 8SOIC
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | HUFA76407DK8T_F085 |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 2500 |
| Lifecycle Status | Active (NRND) |
| ROHS | Compliant |
| RoHs Exemption Type | None, RoHS (2015/863) |
| RoHs China | Compliant |
| Reach Status | Compliant |
| Package Type | 8-SOIC |
| Channel Mode | Enhancement |
| Configuration | 2 N-Channel |
| Drain Source Voltage | 60V |
| Drive Voltage | 4.5V, 10V |
| FET Feature | Logic Level Gate |
| FET Options | N/R |
| FET Type | Array |
| Gate to Source Voltage | ±16V |
| Input Capacitance | 330pF |
| Input Capacitance Test Voltage | 25V |
| Maximum Continuous Drain Current | 3.8A (Ta) |
| Maximum Drain to Source Resistance | 90 mOhm @ 3.8A, 10V |
| Maximum Gate to Source Threshold Voltage | 3V @ 250µA |
| Maximum Junction Temperature | 150°C (TJ) |
| Maximum Operating Temperature | N/A |
| Maximum Power Dissipation | 2.5W (Ta) |
| Maximum Pulse Drain Current | N/A |
| Maximum Total Gate Charge | 11.2nC |
| Maximum Total Gate Charge Test Voltage | 10V |
| Minimum Junction Temperature | -55°C (TJ) |
| Minimum Operating Temperature | N/A |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 2.4nC |
| Typical Gate to Source Charge | 1.05nC |