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HUF75639S3
onsemi

HUF75639S3

MFR #HUF75639S3

FPN#HUF75639S3-FL

MFRonsemi

Part DescriptionN-Channel 100 V 56A (Tc) 200W (Tc) Through Hole I2PAK (TO-262)
Datasheet
46496-Datasheet
Quote Onlymore info
Multiples of: 800more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameHUF75639S3
Packaging TypeTube
Packaging Quantity800
Lifecycle StatusLast Time Buy
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage100V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance2000pF
Input Capacitance Test Voltage25V
Life Cycle StatusLast Time Buy
Maximum Continuous Drain Current56A (Tc)
Maximum Drain to Source Resistance25 mOhm @ 56A, 10V
Maximum Gate to Source Threshold Voltage4V @ 250µA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation200W (Tc)
Maximum Pulse Drain CurrentN/A
Maximum Total Gate Charge130nC
Maximum Total Gate Charge Test Voltage20V
Minimum Junction Temperature-55°C (TJ)
Package TypeI2PAK (TO-262)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge24nC
Typical Gate to Source Charge9.8nC